全部
(99.5%)
(99.999%)
(99.9999%)
100 μg/mL in Water, tr Hydrofluoric acid
1000 μg/g in 75 cSt Base oil
1000 μg/mL in Water, tr Sodium hydroxide, tr Hydrofluoric acid
1000 μg/mL in Water, tr Hydrofluoric acid
10000 μg/mL in Water, tr Hydrofluoric acid
5000 μg/g in 75 cSt Base oil
98.4%
98%
99.5%
99.9%
99.99%
99.9985%
99.999%
99.999+%
99.9999%
99%
99+%
disks, 13mm, thickness 0.38mm, single crystal, 100%
disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
min. 97%
nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
pieces, 99.95% trace metals basis
rod, 100mm, diameter 10.0mm, single crystal - random orientation, 100%
rod, 100mm, diameter 12.7mm, single crystal - random orientation, 100%
rod, 100mm, diameter 2.0mm, crystalline, 100%
rod, 100mm, diameter 25mm, crystalline, 100%
rod, 100mm, diameter 5.0mm, crystalline, 100%
rod, 10mm, diameter 2.0mm, crystalline, 100%
rod, 25mm, diameter 2.0mm, crystalline, 100%
rod, 25mm, diameter 3.15mm, single crystal - random orientation, 100%
rod, 40mm, diameter 20mm, single crystal, -100, 99.999%
rod, 50mm, diameter 2.0mm, crystalline, 100%
rod, 50mm, diameter 3.15mm, single crystal - random orientation, 100%
rod, 50mm, diameter 5.0mm, crystalline, 100%
rod, 50mm, diameter 5mm, single crystal, -100, 99.999%
rod, 50mm, diameter 5mm, single crystal, -111, 99.999%
rod, 50mm, diameter 6mm, single crystal, -111, 99.999%
sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%
sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%
sheet, 14x14mm, thickness 1.0mm, single crystal, -111, 100%
sheet, 25x25mm, thickness 1.0mm, polycrystalline, 99.999%
sheet, 25x25mm, thickness 1.0mm, single crystal, -100, 100%
sheet, 40x40mm, thickness 3.0mm, single crystal, p-type, 100%
sheet, 52x52mm, thickness 1.0mm, polycrystalline, 99.999%
wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickne
wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam
wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × t
wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickne
wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × t
wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm