双(μ-二甲氨基)四(二甲氨基)镓, 98% , 98%
Bis(mu-dimethylamino)tetrakis(dimethylamino)digallium, 98%
分子式: C12H36Ga2N6
分子量: 403.90
纯度: 98%
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Technical Notes:
1. AL D/CVD precursor for gallium thin film deposition
References:
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